ptva042502ec ptva042502fc all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive deviceobserve handling precautions! data sheet 1 of 10 rev. 03.1, 2016-04-19 thermally-enhanced high power rf ldmos fet 250 w, 50 v, 470 C 806 mhz description the ptva042502ec and ptva042502fc ldmos fets are designed for use in power amplifer applications in the 470 mhz to 806 mhz frequency band. features include high gain and thermally-enhanced package with bolt-down or earless fanges. manufactured with infneon's advanced ldmos process, these devices provide excellent thermal per - formance and superior reliability. ptva042502fc package h-37248-4 features ? input matched ? integrated esd protection ? human body model class 1c (per ansi/ esda/jedec js-001) ? low thermal resistance ? rohs compliant ? capable of withstanding a 10:1 vswr at 55w average power under dvb-t signal condition rf characteristics dvb-t (8k ofdm, 64qam) characteristics (tested in infneon test fxture) v dd = 50 v, i dq = 800 ma, ? = 806 mhz, input par = 10.5 db (unclipped), output par = 7.8 db @ 0.01% ccdf probability characteristic symbol min typ max unit average output power p out 55 w gain g ps 17.5 19 db drain efficiency h d 23 25.5 % adjacent channel power ratio acpr C29.5 C25 dbc (acpr integrated over 200 khz bw at + 4.3 mhz offset from center frequency) ptva042502ec package h-36248-4 -33 -31 -29 -27 -25 -23 10 15 20 25 30 35 450 500 550 600 650 700 750 800 850 imd shoulder (dbc) efficiency (%), gain (db) frequency (mhz) dvb - t performance efficiancy, gain and imd3 shoulder vs frequency v dd = 50 v, i dq = 800 ma, p out = 55 w avg efficiency gain imd shoulder ptva042502fc_g1 acpr
data sheet 2 of 10 rev. 03.1, 2016-04-19 ptva042502ec ptva042502fc dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 105 v drain leakage current v ds = 50 v, v gs = 0 v i dss 1.0 a v ds = 105 v, v gs = 0 v i dss 10.0 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) 0.1 w operating gate voltage v ds = 50 v, i dq = 800 ma v gs 3.0 3.7 4.0 v gate leakage current v gs = 10 v, v ds = 0 v i gss 1.0 a maximum ratings parameter symbol value unit drain-source voltage v dss 105 v gate-source voltage v gs C6 to +12 v junction temperature t j 200 c storage temperature range t stg C65 to +150 c thermal resistance (t case = 70c, 55 w cw) ( s ) r qjc 0.4 c/w ordering information type and version order code package and description shipping ptva042502ec v1 r0 ptva042502ecv1r0xtma1 h-36248-4, push-pull, bolt-down tape & reel, 50pcs ptva042502ec v1 r250 ptva042502ecv1r250xtma1 h-36248-4, push-pull, bolt-down tape & reel, 250pcs ptva042502fc v1 r0 PTVA042502FCV1R0xtma1 h-37248-4, push-pull, earless tape & reel, 50pcs ptva042502fc v1 r250 ptva042502fcv1r250xtma1 h-37248-4, push-pull, earless tape & reel, 250pcs
data sheet 3 of 10 rev. 03.1, 2016-04-19 ptva042502ec ptva042502fc typical performance (cont.) 0 10 20 30 40 50 60 16 18 20 22 24 26 28 29 33 37 41 45 49 53 57 efficiency (%) gain (db) output power (dbm) cw performance v dd = 50 v, i dq = 800ma, ? = 470 mhz efficiency gain ptva042502fc_g2 0 15 30 45 60 -60 -50 -40 -30 -20 30 35 40 45 50 55 efficiency(%) imd up & low (dbc) average output power (dbm) two tone drive - up v dd = 50 v, i dq = 800 ma, ? = 470 mhz, 1mhz tone spacing im3 up im3 low efficiency ptva042502fc_g3 0 15 30 45 60 -60 -50 -40 -30 -20 30 35 40 45 50 55 efficiency(%) imd up & low (dbc) average output power (dbm) two tone drive - up v dd = 50 v, i dq = 800 ma, ? = 806 mhz, 1mhz tone spacing im3 up im3 low efficiency ptva042502fc_g4 -15 -10 -5 0 5 10 0 5 10 15 20 25 250 350 450 550 650 750 850 950 input return loss (db) gain (db) frequency (mhz) small signal cw gain & input return loss v dd = 50 v, i dq = 800 ma irl gain ptva042502fc_g5
ptva042502ec ptva042502fc all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive deviceobserve handling precautions! data sheet 4 of 10 rev. 03.1, 2016-04-19 load pull performance pulsed cw signal: 16 s, 10% duty cycle, 50 v, 100 ma p 1db max output power max pae freq [mhz] zs [ w] zl [w] gain [db] p out [dbm] p out [w] pae [%] zl [w] gain [db] p out [dbm] p out [w] pae [%] 500 0.9 C j1.4 2.9 + j0.8 22.4 54.05 254 71.2 2.5 + j4.5 24.6 50.59 115 79.5 600 0.7 C j2.0 2.2 + j0.8 21.1 52.15 164 61.8 2.2 + j3.6 23.4 49.27 85 76.3 700 1.4 C j2.8 2.1 + j0.8 20.5 52.64 184 59.6 1.9 + j3.4 22.9 49.97 99 75.3 859 3.7 C j4.9 2.0 + j0.2 19.1 52.38 173 62.2 1.8 + j1.9 21.2 50.44 111 74.1 pulsed cw signal: 16 s, 10% duty cycle, 50 v, 100 ma p 3db max output power max pae freq [mhz] zs [ w] zl [w] gain [db] p out [dbm] p out [w] pae [%] zl [w] gain [db] p out [dbm] p out [w] pae [%] 500 0.9 C j1.4 2.9 + j0.6 20.3 54.58 287 74.1 2.6 + j4.1 22.4 51.49 141 80.0 600 0.7 C j2.0 2.3 + j0.7 19.0 52.77 189 62.2 2.3 + j3.2 21.1 50.39 109 76.9 700 1.4 C j2.8 2.2 + j0.7 18.4 53.34 216 60.2 1.8 + j3.2 20.7 50.60 115 75.8 859 3.7 C j4.5 2.0 + j0.1 17.0 53.11 205 63.9 1.8 + j1.8 19.1 51.08 128 73.6
data sheet 5 of 10 rev. 03.1, 2016-04-19 ptva042502ec ptva042502fc reference circuit , 470 C 806 mhz reference circuit assembly diagram (not to scale) ptva 042502fc_in _04 c102 rf_in rf_out v dd v gs v dd p t v a 0 4 2 5 0 2 f c _ c d _ 0 4 - 2 9 - 2 0 1 5 c101 c121 c 105 c104 c 106 c108 c 107 c109 r 201 c205 c204 c206 c 202 c201 c 203 c 212 c110 c111 c112 ptva042502 fc _out _04 ro 4350 , .020 ( 105) ro 4350 , .020 (193 ) r 101 c113 c 115 c 116 c 114 c 103 r 102 r 103 c117 c118 c119 c120 c221 c213 c211 c215 c214 c 216 c218 c217 c219 c 220 c 207 c208 c 209 c210 v gs
data sheet 6 of 10 rev. 03.1, 2016-04-19 ptva042502ec ptva042502fc reference circuit (cont.) components information component description manufacturer p/n input c101, c102 capacitor, 20 pf atc atc100a200jw150xb c103, c104, c112, c115 capacitor, 8.2 pf atc atc100a8r2jw150xb c105, c106 capacitor,120 pf atc atc700a120kp150xb c107, c108, c109, c110, c117, c121 capacitor, 4.7 f murata electronics north america grm32er71h475ka88l c111, c113 capacitor, 10 pf atc atc100a100jw150xb c114, c116 capacitor, 6.8 pf atc atc100a6r8jw150xb c118, c120 capacitor, 100 pf atc atc100a101jw150xb c119 capacitor, 91 pf atc atc100a910jw150xb r101, r102 resistor, 1k w panasonic electronic components erj-8geyj102v r103 coax, 25 w amwaye ut-090c-25 output c201, c202 capacitor, 270 pf atc atc700a271kp150xb c203, c204, c205, c206, c220, c221 capacitor, 4.7 f murata electronics north america grm32er71h475ka88l c207, c208, c209, c210 capacitor, 100 f panasonic electronic components eee-fp1v101ap c211 capacitor, 3.9 pf atc atc100a3r9cw150xb c212 capacitor, 6.8 pf atc atc100a6r8jw150xb c213, c215 capacitor, 8.2 pf atc atc100a8r2jw150xb c214 capacitor, 5.6 pf atc atc100a5r6cw150xb c216 capacitor, 3.3 pf atc atc100a3r3cw150xb c217, c218 capacitor, 100 pf atc atc100a101jw150xb c219 capacitor, 91 pf atc atc100a910jw150xb r201 coax, 25 w amwaye ut-090c-25 reference circuit assembly dut ptva042502ec or ptva042502fc test fixture part no. ltn/ptva042502ec v1 or ltn/ptva042502fc v1 pcb rogers 4350, 0.508 mm [0.020] thick, 2 oz. copper, r = 3.66, ? = 470 C 806 mhz find gerber fles for this test fxture on the infneon web site at www.infneon.com/rfpower
data sheet 7 of 10 rev. 03.1, 2016-04-19 ptva042502ec ptva042502fc pinout diagram (top view) pin description d1 drain device 1 d2 drain device 2 g1 gate device 1 g2 gate device 2 s source (flange) lead connections for ptva042502ec and ptva042502fc h - 37248 - 4 _pd _10 - 10 - 2012 s d1 d2 g1 g2 s g1 d1 d 2 g2 h - 36248 - 4 _pd _10 - 02 - 2013
data sheet 8 of 10 rev. 03.1, 2016-04-19 ptva042502ec ptva042502fc package outline specifications package h-36248-4 diagram notesunless otherwise specifed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless specifed otherwise. 4. pins: d1, d2 C drains; g1, g2 C gates; s C source. 5. lead thickness: 0.10 + 0.076/C0.025 mm [0.004+0.003/C0.001 inch]. 6. gold plating thickness: 1.14 0.38 micron [45 15 microinch]. h - 36248 - 4 _po _02 . 1 _10 - 22 - 2013 c l l c c l 19. 81 0. 20 [. 780 0.008 ] d1 d 2 g 1 g2 1. 02 [. 040 ] 34. 04 [1. 340 ] sph 1. 57 [. 062 ] 3. 76 0.25 [. 148 0.010 ] flange 9.78 [.385] lid 9 . 40 [.370] 19.430.51 [.7650.020] 4x 3.81 [. 150 ] 2x 12. 70 [. 500 ] 2x 4 . 83 0. 51 [. 190 0.020 ] 4x r1. 52 [r . 060 ] 2x r1 . 63 [r . 064 ] s 27. 94 [1 . 100 ] 2x 45 x 2.72 [45 x .107 ] (8 . 89 [. 350 ]) (5.08 [. 200 ])
data sheet 9 of 10 rev. 03.1, 2016-04-19 ptva042502ec ptva042502fc package outline specifications (cont.) package h-37248-4 find the latest and most complete information about products and packaging at the infneon internet page http://www.infneon.com/rfpower diagram notesunless otherwise specifed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless specifed otherwise. 4. pins: d1, d2 C drains; g1, g2 C gates; s C source. 5. lead thickness: 0.10 + 0.076/C0.025 mm [0.004+0.003/C0.001 inch]. 6. gold plating thickness: 1.14 0.38 micron [45 15 microinch]. c l l c c l 2x 12 . 70 [. 500 ] 19. 810 . 20 [. 780 0 . 008 ] 4x 3.81 [. 150 ] lid 9. 40 [. 370 ] flange 9. 78 [. 385 ] 2 x 4.830 . 51 [. 190 0 . 020 ] 3. 76 0.25 [. 148 0.010 ] sph 1. 57 [. 062 ] 4x r0. 76 +0 . 13 - 0. 38 [ r . 030 +0.005 - 0 . 015 ] d1 d 2 g 1 g2 1. 02 [. 040 ] 20 . 57 [. 810 ] s 2x 45 x 2.72 [45 x . 107 ] (8.89 [. 350 ]) ( 5. 08 [. 200 ]) 19. 430.51 [. 765 0.020 ] h - 37248 - 4 _po _02 _01 - 09 - 2013 0 . 0381 [. 0015] - a -
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